Development of a Novel Gas Spray Module for MOCVD Systems

10.6567/IFToMM.14TH.WC.PS2.001

Ching-Chiun Wang；Kuan-Chou Chen；Chen-Der Tsai；Jung-Chen Chian；Chu-Li Chao；Yi-Jiun Lin；Chih-Yung Huang

Gas spray module ； film uniformity ； growth rate

Proceedings of the 14th IFToMM World Congress

14th-5（2015 / 11 / 06）

80 - 83

英文

This study investigates a novel concentric circular nozzle spray module for MOCVD in vertical rotating disk reactors, for which the outer ring is group III (TMGa) source and the inner ring is the group V (NH_3) source. Through the group III and V source velocity differ, introduced Ga and N gas molecules react, first with each other, and then at the surface of the substrate to form a GaN film. The novel gas spray module was found to not only increase the deposition rate, but also enhanced the film thickness uniformity. Experimental results showed that GaN film thickness non-uniformity was less than 5% and deposition rate is 3.9 μm/hr. However, experiment and simulation analysis error value was less than 10%.