Bending-induced Changes in Transport Properties of Silicon on Insulator Devices

10.6919/ICJE.202205_8(5).0063

Yifang Yu

Silicon on Insulator Devices ； Electron Transport Properties ； Bending Deformation

International Core Journal of Engineering

8卷5期（2022 / 05 / 01）

493 - 498

英文

In this paper, we systematically investigate the binding-induced changes in transport 7 properties of silicon on insulator devices by combining a tight-binding model and the nonequilib-8 rium Green's Function theory. When a thin device of 1.00-nm thickness is bent with a curvature of 9 0.24 nm-1, its ON and OFF currents are changed less than 20%. However, further bending with a 10 curvature of 0.48 nm-1 will dramatically reduce its currents and affect its functionality. When the 11 device is thicker, even a smaller bending curvature of 0.10 nm-1 may change its currents for more 12 than 20%. Our results provide a theoretical guide for the design and fabrication of flexible electronic 13 devices based on silicon on insulator structures.

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