考慮曝光後烘烤之微影最佳化以及光酸效應對10奈米及更先進之節點的影響

Lithography Optimization considering Post-Exposure Bake and the Photo-Acid Effect for 10-nm Node and Beyond

10.6342/NTU201700106

林沛諄

微影系統模擬 ； 曝光後烘烤 ； 希兒薇亞方程式 ； 電子束微影技術 ； 光酸擴散 ； Lithography Simulation ； Post-Exposure Bake ； Sylvester Equation ； E-beam Lithography ； Acid Diffusion.

臺灣大學電子工程學研究所學位論文

2016年

博士

陳中平

英文

曝光後烘烤是現今超大型積體電路製造中不可或缺之重要製程，其幫助光阻有效減少微影紫外光所造成之駐波效應的影響。除此之外，因為模擬之時間以及大量記憶體之需求，把一個有效及完整的三維之光阻影響考慮至電路布局之最佳化目前是非常之缺乏，我們提出一高效之方法來模擬曝光以及曝光後烘烤兩道製程，分別為阿貝主成分分析系統以及希兒薇亞方程式，並且使用至光源光罩最佳化和次解析輔助特徵來實做電路布局之最佳化。另外在實驗結果中可以得到，我們在曝光後烘烤之模擬速度比傳統之高斯卷積之方法快上二十倍以上。 電子束微影以及傳統之光學微影因為曝光之行為不同，另外對於下一代曝光之製程模擬的解析度要求更為精細，我們提出一套針對於新製程之電子束直寫曝的模擬系統，在考慮不同光酸擴散長度之下，當光酸擴散長度比最小之臨界尺寸的一半還要長時，不同模擬方法會呈現不同之模擬結果，而兩種方法所得之結果已遠超過相應製程所容需之誤差，可能造成之影響必須審慎考量。

As one of the critical stages of a very large scale integration fabrication process, post-exposure bake (PEB) plays a crucial role in determining the final three-dimensional (3-D) profiles and lessening the standing wave effects. However, the full 3-D chemically amplified resist simulation is not widely adopted during the post-layout optimization due to the long run-time and huge memory usage. An efficient simulation method is proposed to simulate the PEB while considering standing wave effects and resolution enhancement techniques, such as source mask optimization and sub-resolution assist features based on the Sylvester equation and Abbe-principal component analysis method. Simulation results show that our algorithm is 20× faster than the conventional Gaussian convolution method. Resist modeling for electron beam lithography is relatively scarce compared to the traditional optical lithography photoresist modeling. Besides, the sub-nanometer modeling accuracy requirement for single digital node technology differs drastically from the conventional empirical modeling method. We proposed a simulator to simulate the E-beam lithography. And consider about the effect from the photo-acid when the acid diffusion length is longer than the half of the critical dimension. The result shows these differences of these two methods are larger than the allowed lithography process deviation for the advanced technology nodes. These differences increase with acid diffusion length, reach the lithography CD control error specification 10% CD proposed by ITRS when the acid diffusion length is larger than half of the CD, which would significantly reduce the process window and CD error budget.

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