常壓雙層石墨烯的成長與研製

Bilayer graphene by chemical vapor deposition under atmospheric condition

10.6342/NTU.2014.01750

蕭于哲

雙層石墨烯 ； 能隙 ； 常壓化學氣相沉積法 ； 銅箔 ； 遷移率 ； bilayer grapheme ； band gap ； atmospheric pressure chemical vapor deposition ； copper ； mobility

國立臺灣大學機械工程學系學位論文

2014年

碩士

張所鋐

繁體中文

單層石墨烯有著極高的載子遷移率，雖然參雜金屬能夠提高能隙，卻沒辦法精準控制能隙的大小，使之難以應用在電子元件上。而雙層石墨烯雖然載子遷移率略低於單層石墨烯，但藉由電位場的控制，就能夠控制能隙大小的特性，使其在電子相關的應用比單層石墨烯更有彈性。目前對於成長穩定層數的雙層石墨烯相關研究並不多，因此本研究以化學氣相沉積系統，調整製程參數控制石墨烯的成長，成長穩定的雙層石墨烯。 本研究發現，製程參數在成長溫度1000°C、氫氣、氬氣、甲烷流量分別為10sccm、500sccm、7.5sccm下，能夠成長出大面積覆蓋且層數穩定的雙層石墨烯。而對於其他研究中會對銅箔進行酸蝕的前處理，本研究發現在銅箔表面氧化程度不高的前提下，酸蝕銅箔反而會造成石墨烯層數難以控制。經過量測，本研究成長的雙層石墨烯載子遷移率為913.2 cm^2 / V .s，其值與機械剝離法製備的雙層石墨烯相似，顯示本研究成長的石墨烯品質良好。

Monolayer graphene has extraordinary electron mobility, but with zero band gap, it is hard to apply on nanoscale electronics. Although bilayer graphene has lower mobility than monolayer, band gap can be controlled if an electric displacement field is applied to the two layers precisely, make it has good flexibility in design of nanoscale electronics. Literature about synthesis of uniform bilayer graphene layers is few now, so we try to grow stable bilayer graphene by adjusting parameter using chemical vapor deposition. I found that at 1000°C, hydrogen, argon, and methane equals to 10sccm, 500sccm, and 7.5sccm can grow bilayer graphene with high coverage and bilayers. Copper was not acid washing before growth, which is different from other paper. We found that acid washing introducing difficulty to the control of layer. The mobility of bilayer graphene is 913.2 cm^2 / V .s, which is similar to mobility of bilayer graphene exfoliated from graphite. That means bilayer graphene grown by this research with high quality.

1. 謝孟倫(2016)。奈米碳管叢之表面熱對流效率探討。國立臺灣大學機械工程學系學位論文。2016。1-83。