高性能高分子合成及電晶體式記憶體與電變色發光元件之應用研究

Preparation of High Performance Polymers for the Applications of Transistor-Type Memory and Electrofluorochromic Devices

10.6342/NTU201703861

鄭舜文

連接結構效應 ； (光)電晶體式記憶體 ； 電變色發光元件 ； linkage effect ； transistive memory ； electrofluorochromic device ； phototransistor

臺灣大學高分子科學與工程學研究所學位論文

2017年

碩士

劉貴生

英文

本論文分為四個章節，第一章為總體序論，簡述高性能高分子、有機-無機複合材料及高分子複合材料記憶體元件的應用及發展。第二章中，以SiO2/Si為基底，接著以旋轉塗佈法沉積一層駐極體用來捕捉電洞與電子，駐極體分別是TPA-PIS、TPA-PES與TPA-PETS，它們擁有相同的施體與受體但不同的連接結構，探討由於結構能階等特性導致分別擁有的不同電性特徵。第三章中，藉由合成出具發光效應之高分子，第一步將其製備為電變色發光元件，探討由於不同結構導致不同的發光效應以及元件穩定性；第二步將具有發光性質的高分子製備成光電晶體式記憶體，未來亦能將其應用於紫外光感測器。第四章為結論。

This study has been separated into four chapters. Chapter 1 is general introduction of high performance polymer, organic-inorganic hybrid materials, and polymer hybrid memory. In chapter 2, aromatic sulfonyl-containing polyether (TPA-PES), polyester (TPA-PETS) and polyimide (TPA-PIS) have been prepared successfully for investigating the relationship between structure of these high-performance polymers with different linkage groups but the same donor and acceptor units and memory properties, and exploring the effects of linkages on memory behaviors of the obtained devices. The different linkages of the three polymers are expected to have distinct dipole moment, linkage conformation, energy band gaps and memory properties. In chapter 3, novel electrochromism (EC) and photoluminescence (PL)-active TPA-CN-CH, TPA-CN-TPE and TPA-OMe-TPE were prepared by direct polymerization. Furthermore, by introducing viologen into electrolyte as a counter EC layer for charge balance, the resulted EFC exhibited notable improvement in reducing oxidation potential and switching recovery time with enhanced fluorescent contrast ratio during pulse on/off multi-cyclic scanning. An OFET memory containing a novel organic polymer TPA-CN-TPE, in which the photo-induced charges can be successfully trapped and detrapped. The luminescent polymer emits intense green emission upon ultraviolet (UV) light excitation and serves as a trapping element of charges injected from the pentacene semiconductor layer. The present study on photo-assisted novel memory may motivate the research on a new type of light tunable charge trapping photo-reactive memory devices.

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