以化學氣相沉積法成長硼摻雜型石墨烯和新穎氮化矽薄膜前驅物之合成

Develop Boron-doped Graphene by Chemical Vapor Deposition and Synthesis of Novel Precursors of Silicon Nitride Film

姜妍忻

化學氣相沉積法 ； 原子層沉積法 ； 摻雜型石墨烯 ； 氮化矽薄膜

清華大學化學系所學位論文

2016年

碩士

劉瑞雄

繁體中文

第一章 我們合成含硼的多芳香環碳氫化合物並藉由化學氣相沉積法進行硼摻雜型石墨烯的成長，成功製備大面積均勻的單層硼摻雜石墨烯，而後進行硼摻雜石墨烯物理性質的分析與量測。最後將轉移的硼摻雜石墨烯使用圖紋化製程製備成OLED元件的透明電極，以硼摻雜石墨烯作為陽極與綠色磷光元件匹配並且擁有良好的發光效率。 第二章 由於電子元件微小化的趨勢，原子層沉積法為目前薄膜製程研究的重點。我們以使用自組裝原子層沉積系統製成氮化矽薄膜為目標，改良與設計矽的前驅物。最後成功得到絕緣良好的介電薄膜。

Chapter I We synthesized boron-contained polyaromatic hydrocarbon ,and it was used to grow boron-doped graphene by chemical vapor deposition, then we got large area and uniform monolayer graphene. We measured and analyzed its physical properties. Boron-doped graphene was patterned and used as anode in a green phosphorescent OLED device that showed an outstanding external quantum efficiency. Chapter II Since electronic devices were miniaturizated, atomic layer deposition (ALD) method for thin film has been focused recently. In this chapter, to produce silicon nitride thin film with using synthesis of novel silicon precursor is our main research goal, by home-made ALD system. Finally, we got the good insulating film.

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