英文摘要
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The cost of gold has been dramatically increasing, therefore copper wire has been used to replace gold wire as conduction material. Regarding copper wire capability, if atmospheric temperature is under room temperature (about 20 degrees), the copper wire resistivity is 0.017micro-ohm-m. Gold wire resistivity under room temperature is 0.022micro-ohm-m. Comparing copper wire and gold wire electric conductivity, it shows that the copper wire is better than gold by about 25–30%. Besides, copper heat conductivity is better then gold by over 25%. Therefore, if the copper wire replaces gold wire in the assembly process, the heat dissipation and energy efficient performance will be improved.
The material development of the wafer is trying to have electric resistance and low dielectric layer material, it results in that A1 layer is decrease from 12k or 8k and even Low-k. To reduce metal layers can improve the R/C delay problem, lower power dissipation and cross-talk noise.
There is an impact on the IC package resulting from using the copper and low K material. It causes that the whole IC structure strength is getting worse and the coefficient of thermal expansion is getting higher. Crack and Crater have been problems of copper wire bounding process for a long time. Based on the practical product operation, we study the optimal operating situation especially focusing on 0.8mil copper wire and 8k Al layer material. In this thesis, we perform design of experiments(DOE) to study the cause-effect relation in the bonding process and find the optimal operating conditions to stabilize the quality and increase the capacity of production.
Base on experimental results, increasing the initial force can inhibit the USG power and reduce the possibility of bond pad crack; flatter copper ball can increase contact area to allow high ball shear. It can improve the corresponding reliability; Short EFO fire time could control ball size to avoid ball bridge issue.
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