微波及毫米波系統關鍵元件之設計與研究

黃梓原

doi:10.6342/NTU.2015.02352

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微波及毫米波系统关键元件之设计与研究

Design and Research of Key Components for Microwave and Millimeter-Wave Systems

黄梓原 , 硕士　　导师：王晖　　

英文 DOI： 10.6342/NTU.2015.02352

互补式金属氧化物半导体；切换式相移器；可调增益放大器；分布式放大器；功率放大器； CMOS ； switching type phase shifter ； variable gain amplifier ； distributed amplifier ； power amplifier

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摘要 │ 参考文献 (55) │ 被引用文献 (2) │ 国际计量

摘要〈TOP〉

并列摘要〈TOP〉

This thesis consists of three parts. The first part is a switching type phase shifter (STPS) and variable gain amplifier (VGA) using 90 nm CMOS technology. Different insertion losses while changing phase states will cause the amplitude error. To minimize the amplitude error of the STPS, a variable gain amplifier can be cascaded with the phase shifter to compensate the different loss at each state. The measured phase error is under 11.25° in 17.7 to 20.7 GHz. The variable gain amplifier has enough gain control range to cover the amplitude error caused by STPS.
The second part is a distributed amplifier (DA) using new topology developed in 0.18-μm CMOS. The topology uses the combination of the DA with taper-sized transistors and the cascaded single-stage distributed amplifier (CSSDA). This proposed DA takes considerations of gain-band width (GBW) product, output power, noise figure (NF), dc power consumption, and compact size. By using DA with taper-sized transistors, this DA reduces dc power consumption while maintaining the RF performance. This DA achieves 25-dB gain and 34 GHz 3-dB bandwidth with total dc power of 176 mW. The maximum OP1dB is 7.2 dBm and the NF is between 6.5 and 8 dB at frequency lower than 25 GHz with the compact size of 0.86 mm2. This circuit exhibits the best figure of merit (FOM) in 0.18-μm CMOS and comparable performance with the DAs in advanced process.
The third part is a power amplifier (PA) developed in 0.18-μm CMOS. The topology adopts the adaptive bias and pre-distortion linearizer simultaneously. The design of this PA takes back-off efficiency, linear output power, and quiescent power consumption into consideration. After linearization, the proposed PA achieves 6.8% PAE at 6-dB back-off from P1dB, 14.1% PAE at OP1dB, and high linear output power 9.2 dBm with third-order intermodulation distortion (IMD3) of -40 dBc. This circuit shows good performance compared with the published PAs in 0.18-μm CMOS and suitable for high data rate transmission applications.

参考文献 ( 55 ) 〈TOP〉

[1] Matthew A. Morton, Jonathan P. Comeau, John D. Cressler, Mark Mitchell, and John Papapolymerou, “Sources of phase error and design considerations for silicon-based monolithic high-pass/low-pass microwave phase shifters,” IEEE Trans. Microw. Theory Tech., vol. 54, no 12, pp. 4032-4040, Dec. 2006.
连结：
[2] Dong-Woo Kang, and Songcheol Hong, “A 4-bit CMOS phase shifter using distributed active switches,” IEEE Trans. Microw. Theory Tech., vol. 55, no 7, pp. 1476-1483, Jul. 2007.
连结：
[3] Masatake Hangai, Morishige Hieda, Norihiro Yunoue, Yoshinobu Sasaki, and Moriyasu Miyazaki, “S- and C-band ultra-compact phase shifters based on all-pass networks,” IEEE Trans. Microw. Theory Tech., vol. 58, no 1, pp. 41-47, Jan. 2010.
连结：
[4] Byung-Wook Min and Gabriel M. Rebeiz, “Ka-band BiCMOS 4-bit phase shifter with integrated LNA for phased array T/R modules,” in IEEE MTT-S Int. Microw. Symp. Dig., Jun. 2007, pp. 479-482.
连结：
[6] Pei-Si Wu, Hong-Yeh Chang, Ming-Fong Lei, Bo-Jr Huang, Huei Wang, Cheng-Ming Yu, and John G. J. Chern, “A 40-74 GHz amplitude/phase control MMIC using 90-nm CMOS technology,” in European Microwave Integrated Circuits Conference., Oct. 2007, pp. 115-118.
连结：

被引用文献 (2) 〈TOP〉

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引用含有DOI的文献

DOI可强化引用精确性、增强学术圈连结，并给予使用者跨平台的良好使用经验，目前在全世界已有超过五千万个对象申请DOI。 如想对DOI的使用与概念有进一步了解，请参考 （ ） 。

DOI可强化引用精确性、增强学术圈连结，并给予使用者跨平台的良好使用经验，目前在全世界已有超过五千万个对象申请DOI。如想对DOI的使用与概念有进一步了解，请参考（）。