超寬波段之低耗能矽基紅外光偵測器研究

徐隆泰

doi:10.6342/NTU201702430

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超宽波段之低耗能矽基红外光侦测器研究

Study of Silicon Based Infrared Photodetectors with Low Power Consumption and Ultrabroadband Working Capability

徐隆泰 , 硕士　　导师：陈学礼　　

繁体中文 DOI： 10.6342/NTU201702430

矽基红外光侦测器；萧特基光二极体；矽化镍；表面电浆共振；光激发热载子； Folwer theory ；萧特基能障；金属/矽基光侦测器；弱光侦测；宽波段侦测；低耗能； Si-based photodetectors ； Schottky diode ； nickel silicide ； surface plasmon resonance ； hot electrons ； Fowler theory ； Schottky barrier ； metal/Si based photodetector ； low-intensity detection ； broadband working capability ； low power consumption

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摘要 │ 参考文献 (125) │ 国际计量

摘要〈TOP〉

本论文的目的在於开发宽波段且低耗能之红外光侦测器。论文第一部分，提出背面照射式元件，藉由表面电浆共振现象与共振腔效应有效提升矽化镍（nickel silicide, NiSi）元件於近红外光波段的光学吸收值。表面电浆共振的衰逝波可激发矽化镍内部的热电子（hot electrons），使矽基元件在光子能量小於矽的间阶能隙（Eg≈1.124 电子伏特）之光通讯波段仍可操作。热电子的光电响应趋势会遵守Fowler theory，随着光子能量越小，元件的光响应度亦随之变弱。矽化镍/n型矽基板的萧特基能障（Schottky barrier height, Ф_B）为0.65电子伏特，较低的萧特基能障预期会有较高的光电流响应，但也会有暗电流过大、弱光侦测能力不佳等问题。因此，藉由离子布植二氟化硼离子（BF2+）於n型矽基板，调高矽化镍/n型矽基板的萧特基能障，使热电子无法跨越过萧特基能障并累积在接面两端，有利於电压响应输出，并分别讨论元件在电流模式、电压模式操作下，离子布植的最佳化条件。当掺杂剂量为2x1012 ions/cm2二氟化硼离子到n型矽基板时，外加0.0025V偏压，元件在1310奈米、1550奈米之光电流响应度分别高达14.01 mAW-1、10.83 mAW-1。当掺杂剂量为2x1014 ions/cm2之二氟化硼离子到n型矽基板时，元件位於1310奈米、1550奈米之光电压响应度分别高达20.14 VW-1、13.89 VW-1。元件的光电压输出於弱光与强光下皆具有极佳的线性程度，具良好弱光侦测的能力。
    从Folwer theory可知，当入射光的光子能量小於萧特基能障，将无法贡献光电流响应达到光侦测效果，金/n型矽基板的萧特基能障为0.75电子伏特，亦即波长超过1650奈米将无法有效产生光电流，达到光侦测的目的。本论文的第二部分，我们提出正面照射式之超浅沟槽矽基结构元件，藉由表面电浆现象用下，使元件於3.25微米之共振波段具有窄波段、高吸收的特性。於光学模拟上，元件的模拟吸收峰值可高达95 %，吸收峰值的半高波宽约为50奈米，窄波段吸收的特性使得元件仅对於设计波段之入射光能有所反应，，将可避免接收其他波段之入射光能所造成的讯号误判情况发生。当金属吸收大量的入射光後，金属膜的温度上升并进而加热金/n型矽基板的萧特基接面，激发矽基板的价带电子跃迁至导带使接面两端产生电压差，进而贡献光电压响应;光学的高吸收特性也会使金属内部产生大量光激发热电子累积在接面两端，产生光电压响应。因此，即使入射光能量小於金/n型矽的萧特基能障，在上述两种效应的贡献下，我们依然可以藉由光电压输出来达到红外光侦测的目标，不被Fowler theory限制。於光电转换特性上，当外加2.5mV之小偏压，光电流响应度可达2.5x10-3 mAW-1;光电压响应度则可达250 mVW-1。；此外，元件於弱光或强光照射下具有极佳的线性度，可侦测最低入射光功率密度为0.69 mW cm-2。
论文第三部分将延续前述的工作原理，并进一步提出背面照射元件架构之中红外光侦测器。和第二部分的元件相比，此部分我们所提出之背面照射式深沟槽矽基结构元件具有宽波段、高吸收的特性，於模拟上，元件於3.25微米至10微米的吸收值皆可大於50 %，此种宽波段吸收之特性使得元件的工作波段可从3.25微米延伸至10微米，具有宽波段光能回收之能力。於光电转换特性上，此元件於波长3.25微米、6微米、10微米之光电压/光电流响应度分别为42.01mVW-1/2.23×10-3 mAW-1、28.05 mVW-1/4.4×10-3 mA W-1、76.2 mVW-1/7.80×10-3 mA W-1，展现出极宽波段之侦测能力；此外，当入射光波长为10微米时，其於弱光或强光照射下皆有不错的线性程度，可量测到最低入射光功率密度为为1.71mW cm-2。於论文的第二、三部分所提出之元件光电量测皆於室温下进行，符合低耗能之期许。

并列摘要〈TOP〉

The goal of this thesis is to develop the infrared (IR) photodetectors featuring low power consumption and capability of detecting over broad bandwidth. In the first part of thesis, we propose back-illuminated devices that take advantage of surface plasmon resonance phenomena and three-dimensional cavity effects to improve the optical absorption of deep trenched nickel silicide/n-silicon devices in near infrared (NIR) regime. The devices exhibit good rectification properties to collect hot electrons arising from plasmon decay for photodetection well below the bandgap of silicon. In general, the spectral response of hot electron-based device follows Fowler theory. The responsivity becomes lower as the photon energy of incident light decreased. The Schottky barrier height of original NiSi/n-Si device is approximately 0.65eV. Such low barrier height of structured device performed photocurrent-responsivity in IR regime. However, devices also perform high dark current that exhibit insufficient detection capability. Therefore, we propose the BF2+ ion implantation process to dope Si for tuning the barrier height of NiSi/n-Si-based device. As the barrier height of devices increased, the dark current of device would decrease and more photo-induced hot electron would accumulate near the junction instead of passing the barrier. Therefore, the doped devices could perform high detectivity and photovoltage. In this thesis, we also investigate the optimized conditions of implantation in NiSi/n-Si-based devices. As we doped 2x1012 ions/cm2 in n-Si wafer, under 2.5mV bias voltage, the responsivity of devices in current mode are up to 14.01 mA W-1 and 10.83 mA W-1 in 1310nm and 1550nm, respectively. As we doped 2x1014 ions/cm2 in n-Si wafer, the responsivity of devices in voltage mode are up to 20.14 V W-1 and 13.89 V W-1 in 1310nm and 1550nm, respectively. Besides, the devices also perform a high degree of photo-response linearity.
    According to the Fowler theory, the hot electrons cannot contribute photocurrent if the energy of incidental photon is lower the Schottky barrier height of devices. For example, the Schottky barrier height of Au/n-Si is approximately 0.75eV. The incident light having a wavelength longer than 1650nm cannot contribute the photocurrent. In the second part of thesis, we propose the front-illuminated devices of shallow trench/thin metal (STTM) structures for photodection in mid IR regime. The STTM devices take advantage of SPR effect to tune absorption peak in infrared regime. In optical simulation, the absorption of devices could up to 95%, the full width at half maximum (FWHM) of absorption peak is approximately 50nm. The characteristic of high absorption in narrowband is useful for photodetection of incident light in the resonance of spectral regime. After the metal layer absorb mid IR light efficiently, the temperature of metal layer would be increased, the Au/n-Si Schottky was heated and generate the difference of voltage near the junction. According to the Fowler theory, the photo-induced hot electron accumulate near the junction instead of passing the Schottky barrier, contributing photovoltage near the junction. Based on above discussion of photovoltage, the detection bandwidth would not restrict by Fowler theory. We can extend the detection bandwidth to 3.25 µm. With 2.5mV bias voltage, the photocurrent-responsivity of device is 2.5x10-3 mA W-1 in 3.25µm. The voltage-responsivity of device can up to 250 mV W-1. The devices also show linear photovoltage-response in not only high power of incident light region but also the low-intensity detection is 0.69 mWcm-2 at the wavelength of 3.25µm.
   In the third part of thesis, we extend the working mechanism in the second part of thesis, we propose the back-illuminated devices of deep trench/thin metal (DTTM). Compared with the devices in the second part of thesis, the back-illuminated DTTM devices display broadband and high absorption in mid IR regime. In optical simulation, the absorption of DTTM is higher than 50% from 3.25 µm to 10µm, so we can extend the detection bandwidth from 3.25 µm to 10µm. The devices show the ultra-broadband working capability. The photovoltage/photocurrent-responsivity mode can up to 42.01mVW-1/2.23×10-3 mAW-1, 28.05 mVW-1/4.4×10-3 mA W-1, 76.2 mVW-1/7.80×10-3 mA W-1 at the wavelength of 3.25µm, 6µm, 10µm respectively. The devices also show linear photovoltage-response in not only in high intensity of incident light but also low power of incident region and the low-intensity detection is 1.71 mWcm-2 at the wavelength 10µm. Additionally, the devices can work at room temperature (T=300 K), which reach expectation of low power consumption.

参考文献 ( 125 ) 〈TOP〉

8. Fan, H. Y., and Ramdas, A. K., "Infrared Absorption and Photoconductivity in Irradiated Silicon", Journal of Applied Physics, 30, pp. 1127-1134, 1959.
连结：
9. J. Stein, F. L. Vook, A. Borders, Appl. Phys. Lett. 14, 328 (1969)
连结：
14. R. H. Fowler, Phys. Rev. 38, 45–56 (1931).
连结：
15. V. E. Vickers, Applied Optics 10, 2190–2192 (1971).
连结：
19. P. Berini, A. Olivieri, and C. Chen, Nanotechnology 23, 444011 (2012).
连结：

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