寬波段與低耗能之光-電-熱偵測與轉換元件研究

林耕德

doi:10.6342/NTU.2015.02541

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宽波段与低耗能之光-电-热侦测与转换元件研究

Development of Broadband Operation and Low Power-Consumption of Photo-Electronic-Thermo Detection and Conversion Devices

林耕德 , 博士　　导师：陈学礼　　

英文 DOI： 10.6342/NTU.2015.02541

氟化氪准分子雷射；硫化镉光导体；表面电浆共振；表面电浆彩色影像侦测器；矽基红外光侦测器；完美吸收体；光电热转换元件； krypton fluoride excimer laser ； cadmium sulfide photoconductor ； surface plasmon resonance ； plasmonics-based color image sensor ； Si-based infrared ray detector ； perfect absorber ； photo-electronic-thermo conversion device

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摘要 │ 被引用文献 (1) │ 国际计量

摘要〈TOP〉

随着时代的演进与科技发展，光电热转换元件已被广泛的运用於影像感测、光通讯、环境监控、太空侦测以及太阳能源回收等领域。然而现今市售之光电热元件中，大多面临着需操作偏压过大、可侦测之频谱范围受限与侦测能力不足等问题，因而严重地限制了这些元件实际的应用性。因此，本论文主要目的在於开发高效率、宽波段、低耗能之光电热转换元件。
    为了开发高效率之光电热转换元件，直接改善元件之材料品质将可快速的提升整体光电元件之转换效率。论文第一个部分，我们利用氟化氪准分子雷射来对於硫化镉光导体元件进行表面之改质，可大量的制作出低成本、低耗能、高光电响应之硫化镉光侦测器。透过准分子雷射照射於市售低价之光敏电阻元件上，藉由雷射剂量与照射次数之调控，进而使得硫化镉於极浅层之区域产生差排减少与结晶性变好等特性，我们亦发现此具有良好结晶性之硫化镉元件将可於外加极低偏压的情况下於弱光下仍具有极佳的光电响应能力与侦测能力；此外，本论文更发现於雷射退火前後，此硫化镉元件於紫外光波段之光电转换增益将较可见光来的显着。於本论文中，此表面改质之硫化镉元件将可於施加1毫伏特时，便可对於极弱强度(10-2 fW µm-2)之可见光(540 nm)表现出7200 A W-1之光电响应能力与1015 Jones之侦测能力；而对於极弱光强度(1.9×10-2 fW µm-2)之紫外光(365 nm)照射下时，表现出光电响应能力与侦测能力分别为74.7 A W-1与1014 Jones。此外，此表面处理之硫化镉元件於极弱光强度照射时所需的反应时间仅需40毫秒，此反应时间相较於传统数位相机於收集极弱光强度影像时来得更快。因此，於本论文中所提出之极浅区域表面改质之硫化镉元件将非常适用於低耗能之紫外光至可见光波段弱光侦测相关应用上。
    论文第二个部分，我们开发了一种元件架构简单之表面电浆彩色影像侦测器。整体元件结构之组成为将具有周期性孔洞阵列结构之单层铝膜制作於矽基材上以形成萧特基接面，进一步达成彩色影像侦测之目的。此方法可以大幅度的降低繁复的元件结构设计与制程上的难度。此外，周期性孔洞阵列结构的单层铝膜於彩色影像侦测之过程中将具多种功能特性，如：分光、光电转换与光激载子收集；且此种元件设计架构更克服了於传统彩色光侦测器中光传输层所造成的干涉现象，可避免分光後之彩色频谱再次的被扭曲。而於光电转换特性上，此具有表面电浆特性之萧特基元件将可运用金属结构於近场电场强度增强之效应以提升矽之光学吸收，进而使得於不施加偏压之情况下亦可拥有极高的电流输出与光电响应能力；此外，此元件更可将光所激发之载子直接转换为电压之型式输出，以做为判断光强度之依据，纵使於极弱之光强度(fW µm-2)照射下，此元件於电压之输出上仍有几微伏特，相较於传统之彩色影像侦测器，此种方法将可减少於後续电路设计中所需要的电容数量，进而缩小电路设计所需的面积。因此，本论文所提出具有表面电浆特性之萧特基彩色影像侦测器将可更进一步的与互补式金属氧化物半导体相容之电路设计进行整合，以期可利用成熟之半导体技术开发出具有极高像素之彩色影像侦测器。
    论文的第三部分提出了一种利用金属天线结构，其所产生之表面电浆子衰逝可进而产生热电子以跨跃金属与矽基材所形成之萧特基接面，以作为红外线侦测之方法，开创了利用矽基半导体材料来侦测通讯波段之红外光的道路。本论文所提出的金属奈米天线结构为一种将深沟槽薄金属周期性阵列结构制作於矽基材上，将可利用表面电浆共振现象、共振腔效应以充分的收集任一偏振方向入射之红外光源，再透过大面积的金属/矽基材接面大幅地接收由金属所产生的热电子，以提升整体元件於红外光波段之光电流输出。本论文所提出之深沟槽薄金属矽基元件将可於不施加偏压的情况下，便表现出极佳的光电转换能力；此外，此元件不论於强光(3 mW)与弱光(20.5 µW)之通讯波长红外光(1550 nm)照射下，其光电流之输出皆可具有极佳的线性程度。因此，本论文所提出之深沟槽薄金属矽基元件将可突破传统矽基光侦测器所能侦测之波长极限，可低耗能地於宽波段(紫外光至光通讯波段)中收集各种偏振方向之入射光以转换为电讯号之输出来做为光源强度判断之依据，并可与成熟之半导体制程技术整合以用於矽光晶体晶片之许多通讯波段相关应用上。
    论文的第四部分更进一步探讨单层沟槽状薄层金属结构所具有的特殊光学性质及其光热转换特性。本论文提出一个由负载效应所诱发的单层沟槽状薄层金属结构来达成宽波段的光能回收。此由负载效应所诱发的单层沟槽状薄层金属结构将可利用表面电浆现象与共振腔效应於紫外光至近红外光区间提供高吸收、可轻易调控吸收波段且对於光的极化偏振方向不敏感等光学特性，且此结构之最佳化参数大小约为所欲设计波长的一半，如此纵使所欲设计之波长於紫外光或可见光波段，此结构之大小仍可维持数百奈米的尺度，可大幅降低於制程上之难度。於本论文中，此结构所具有的宽波段高吸收特性将可符合太阳光能於地表之光谱辐照度(AM 1.5)分布，如此便可充分的吸收太阳光能，以於太阳光能之回收应用上有所助益；此外，本论文亦已证实此种由负载效应所诱发的单层沟槽状薄层金属结构具有极佳的光热转换能力，并观察到此结构於红外光(5–10 µm)与可见光波段之光学行为大不相同，因此此结构将可充分的吸收具有高光子能量之紫外光、可见光与近红外光以产生热能，而後可藉由连续金属薄膜层将热能有效的传导与收集，并防止所产生的热藉由热辐射之方式而散失，如此便可充分的回收与利用光能，以期可於光能回收利用与感测等相关领域应用上有所助益。
    於论文的最後一部份，我们提出了一种无需彩色滤光片且无接面(junctionless)之彩色影像侦测器。此元件之组成仅为具有单层沟槽状结构之薄层铝膜，此结构将可利用近场之表面电浆特性与共振腔效应大幅度的提升於铝金属膜与空气介面间之电场强度，进而使得此单层结构铝膜具有极大的吸收；而於铝金属膜吸收光能後将会更进一步的将光能转换为热能，进而使得铝金属薄膜之温度有所提升；而後，於铝金属薄膜之温度上升与此沟槽状金属薄膜结构周围所形成的高电场强度之影响下，金属膜内部之电子将会於移动的过程中受到阻碍，因而导致此薄层铝膜之电讯号输出(如：电阻、电流)於固定偏压下发生改变，以作为判断光强度的依据。此外，此单层沟槽状结构之薄层金属膜於光侦测的过程中，将具有多功能之特性，如：颜色选择吸收(仅有於设计波段之光能会被此结构所大幅吸收)、产生热与电场增强来影响金属膜内部电子之移动行为与收集所产生的电讯号差异。於本论文中，我们已证实此元件纵使於低偏压操作下，仍可表现出极佳的光热电转换特性，其彩色分光频谱响应之反应相当快速。相较於过往所发表的基於彩色滤光片且具有接面特性之彩色影像侦测器，本论文中所提出之方法为一种全新的彩色影像侦测器设计概念，将可把此种结构建构於任意之基板上以达成彩色影像之侦测，我们预期此方法将可应用於许多影像感测与光侦测之相关应用上。

并列摘要〈TOP〉

Photo-electronic-thermo conversion devices have been applied in a variety of applications, such as image sensing, optical communication, environmental monitoring, astronomical studies, and solar energy harvesting. However, insufficient detection capability, limited detection bandwidth, and requiring large bias voltage restricted the practical applications of devices. Therefore, the goal of the researches in this thesis is to develop photo-electronic-thermo conversion devices featuring high conversion efficiency, detection over broad bandwidth, and low power consumptions.
    Direct improving the quality of materials can intrinsically enhance the conversion efficiencies of devices. In the first part of thesis, we describe a low-cost cadmium sulfide (CdS) photoconductor that behaves as a highly sensitive and rapidly responding detector toward low-intensity light. Through the observation of transmission electron microscopy images and analysis of photoluminescence and Raman spectra, the degree of crystallization of CdS increased and defects were removed effectively in the region of a few tens nanometers beneath the surface of CdS after treatment with several shots/distinct intensities from a krypton fluoride (KrF) excimer laser. Moreover, we found the improvements of detection capability of CdS devices in the ultraviolet (UV) regime are much larger than that in the visible regime. At a low bias voltage of 1 mV, the treated CdS device provided a record high responsivity of 74.7/7200 A W-1 and a detectivity of 1014/1015 Jones in UV/visible regime. The measured response time of the treated CdS device from the dark to illumination at 10-2 fW µm-2 was only 40 ms—much faster than the shutter speed or exposure time required for a professional digital camera for such low-light image detection. This strategy appears to hold great potential for ultralow-light image detection with ultralow power consumption. 
    In the second part of thesis, we developed a compact surface plasmonics-based color-image sensor comprised only a multifunctional electrode based on a single-layer structured aluminum (Al) film and an underlying silicon (Si) substrate. This approach significantly simplifies the device structure and fabrication processes. Moreover, such Schottky-based plasmonic electrodes perform multiple functions, including color splitting, optical-to-electrical signal conversion, and photogenerated carrier collection for color-image detection. The device took advantage of the near-field surface plasmonic effect around the Al–Si junction to enhance the optical absorption of Si, resulting in a significant photoelectric current output even under zero bias voltage. These plasmonic Schottky-based color-image devices could convert a photocurrent directly into a photovoltage and provided sufficient voltage output for color-image detection even under a light intensity of only several femtowatts per square micrometer. Therefore, this strategy has great potential for direct integration with complementary metal–oxide–semiconductor (CMOS)-compatible circuit design, increasing the pixel density of imaging sensors developed using mature Si-based technology.
    In the third part of thesis, we propose the concept of deep-trench/thin-metal (DTTM) active antenna that take advantage of surface plasmon resonance (SPR) phenomena, three-dimensional (3D) cavity effects, and large-area metal/semiconductor junctions to effectively generate and collect hot electrons arising from plasmon decay and, thereby, increase photocurrent for photodetection well below the semiconductor band edge. The DTTM-based devices exhibited superior photoelectron conversion ability and high degrees of detection linearity under infrared light of both low and high intensity. Therefore, these DTTM-based devices have the attractive properties of high responsivity, extremely low power consumption, and polarization-insensitive detection over a broad bandwidth, suggesting great potential for use in photodetection and on-chip Si photonics in many applications of telecommunication fields.
    In the fourth part of thesis, we describe a broadband perfect absorber based on loading effect–induced single-layer/trench-like thin metallic (LISTTM) structures. These LISTTM structures take advantage of both SPR and 3D cavity effects to provide efficient, tunable, and polarization-insensitive absorption from the UV to the infrared (IR) regime. The optimized hole-width of the LISTTM arrays was approximately one half of the designed wavelength. Therefore, even when the designed absorption band was in the visible regime, the feature sizes of the LISTTM structure could remain on the order of several hundred nanometers—dimensions much larger, and structures much simpler, than those of metamaterial-based absorbers. Moreover, because the absorbance of the specific LISTTM structure was similar to the air mass 1.5 solar spectrum, much solar energy was absorbed by the LISTTM arrays. Besides, these LISTTM structures exhibited superior photothermal performance; they also displayed very low emissivity, thereby decreasing heat dispersion through thermal radiation. Therefore, the LISTTM arrays could efficiently absorb light of higher photon energy in the UV, visible, and near-IR regimes, effectively conduct the generated heat through the continuous metal films, and barely disperse any heat through thermal radiation. Accordingly, these attractive properties suggest that such LISTTM absorbers might have promising applications in many fields related to energy harvesting.
    In the last, we developed a filter-free, junctionless color image sensor that exhibited superior photo–thermo–electrical response under a low bias voltage and a short response time. Although our compact sensor had a simple single-layer trenchlike aluminum (Al) structure, it could perform multiple functions, including light harvesting, color-selective absorption, photo–thermo–electrical transformation, and the ability to collect of photoinduced differences in electrical signals. This device exploited near-field surface plasmon resonance and cavity effects to enhance the intensity of the electric field and the color-selective absorption, ultimately resulting in significant current signals in its structured Al film. With its ability to provide functional filter-free, junctionless structures, this strategy has great potential for the production of devices that operate on different kinds of substrates, thereby bridging various applications of color imaging technologies.

被引用文献 (1) 〈TOP〉

徐隆泰(2017)。超宽波段之低耗能矽基红外光侦测器研究。国立台湾大学材料科学与工程学系学位论文。2017。1-196。

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使用DOI作为永久连结

引用含有DOI的文献

DOI可强化引用精确性、增强学术圈连结，并给予使用者跨平台的良好使用经验，目前在全世界已有超过五千万个对象申请DOI。 如想对DOI的使用与概念有进一步了解，请参考 （ ） 。

DOI可强化引用精确性、增强学术圈连结，并给予使用者跨平台的良好使用经验，目前在全世界已有超过五千万个对象申请DOI。如想对DOI的使用与概念有进一步了解，请参考（）。