單分子層摻雜與微波退火形成超淺摻雜之研究

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单分子层掺杂与微波退火形成超浅掺杂之研究

A Study on Ultra-Shallow Doping by Molecular Monolayer Doping Technology and Microwave Annealing

卓大钧 , 博士　　导师：赵天生;李耀仁　　

英文

微波退火；单层掺杂；超浅掺杂； microwave annealing ； monolayer doping ； ultra-shallow doping

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摘要 │ 参考文献 (139) │ 国际计量

摘要〈TOP〉

现今的互补式金氧半场效电晶体技术发展，对於短通道效应的控制将使得元件制程更趋复杂，为了解决严重漏电流与次临界摆幅劣化等问题，源极/汲极区域的接面制作将会是一大重要课题，尤其是接面深度与接面电阻率。因为高温退火会造成严重的掺杂物扩散，为了活化掺杂物并完成超浅、超陡峭掺杂浓度，低温微波退火将会是一个理想的技术。
首先，我们将磷、砷、二氟化硼分别掺杂於矽基板，并使用微波退火或快速升温退火完成掺杂物活化。在相同片电阻的情况下，微波退火的温度将可比传统快速升温退火少80到140度，因此微波退火更有利於制作低阻值且未扩散的超浅接面。除了比较不同温度下，两种退火技术在片电阻的趋势之外，在此也同时探讨基板的温度，因为基板温度与微波能量的耦合，掺杂物即可在低温的情况下完成活化。
另一方面，元件制作在三维结构上将遭遇技术上的困难，传统的离子布值受限於不均匀的纵向分布，使得掺杂技术将会遭遇到挑战。本论文中，我们发展出一种在矽材料表面进行化学分子反应的方式，利用其自我组装的特性来达到均匀性佳、浅掺杂、无损伤的掺杂过程。由於自我局限的反应特性将对掺杂原子分布有更好的控制能力，因此本掺杂方式将能应用到下个世代。我们将介绍分子掺杂所形成的浅掺杂区对三闸极电晶体的影响及制程的简化方式，并藉由微波退火机制形成浅掺杂区提升元件电特性。此外探讨不同退火机制及退火次数对於源极/汲极区掺杂分布及闸极氧化层造成的影响。
随着元件尺寸的微缩，对於传统金氧半场效电晶体来说，短通道效应与随机掺杂不稳定性将是严重的问题。因为拥有简单制程与较大等效闸极长度的优势，无接面电晶体将会是一个合适的替代选择，然而传统离子布植会有同一晶片掺杂不稳定的困难，对於同一晶片上的无接面电晶体来说将使得每一个电晶体的驱动电流不稳定，这也造成量子效应及较大的串联电阻而劣化元件特性。此外为了有效地控制元件，掺杂通道区的体积必须要够小才能达到良好的闸极控制，这将对驱动电流产生瓶颈，也限制无接面电晶体的发展可行性。为了解决上述问题，我们发展出一种新颖的无接面电晶体，利用单分子层掺杂技术完成球壳掺杂并可不受限於通道体积，由於掺杂仅在表面，闸极会有较佳的控制力(电流开关比>106)，因为该技术可减少随机掺杂不稳定性，同时也将抑制元件临界电压不稳定性、次临界摆幅劣化的问题。
最後，我们利用新颖二氧化碳雷射来提升掺杂物的活化，且该雷射具有未熔融且选择性区域退火的优势，相较於仅以单分子层掺杂技术与微波退火制作的球壳掺杂无接面电晶体，利用单分子层掺杂技术结合微波退火与二氧化碳雷射，球壳掺杂无接面电晶体则有更好的元件特性(电流开关比>107)及驱动电流的改善(提升160%以上)。在此也同时探讨掺杂物活化的机制，先利用微波退火将掺杂物扩散至矽基板表面，接着利用二氧化碳雷射活化位於间隙位置的掺杂物。此方法应用於块状基板式鳍型电晶体亦有良好的元件特性，因此对於三维堆叠元件积体电路的发展将拥有极大的潜力。

并列摘要〈TOP〉

For the state-of-the-art CMOSFETs technology, the fabrication process for short channel effect control will be much more complicated. To solve the problems of severe leakage and subthreshold slope degradation, formation of junctions in the source/drain regions will be an important issue for reducing the dimension of transistors, especially for junction depth and resistivity. Because high temperature annealing results in serious dopant diffusion, microwave annealing (MWA) will be an ideal technique to activate dopants and achieve ultra-shallow and abrupt doping profiles at low temperature.
First, phosphorus, arsenic and BF2 implants in Si were annealed by MWA or rapid thermal annealing (RTA). Compared with the conventional RTA process, the temperature of dopant activation by MWA could be 80 to 140 °C reduction at the same sheet resistance. Therefore, MWA has the great advantage of forming ultra-shallow junction with low resistivity and without diffusion. Besides showing the trend of sheet resistance versus temperature by MWA and RTA, the substrate temperature is also discussed. Due to the combination of substrate temperature and coupling of microwave energy, the dopants could be activated at low temperature.
On the other hand, device fabrication process will have some doping problems in three-dimensional structure. Due to the limitation of non-uniform vertical doping profile in conventional implantation, doping technology causes a challenge in fabrication. In this dissertation, a new doping method utilizing a chemical molecular reaction on silicon surface is developed to reach conformal, ultra-shallow, and damage-free properties. Furthermore, the self-limit quality of molecular reaction can have a better controllability on dopant distribution, which is more suitable in next technology node. We introduce the influence of the ultra-shallow regions formed by molecular doping for tri-gate transistors and the simplification process of device fabrication. Moreover, microwave annealing will be utilized to form shallow doping regions to enhance the electrical characteristics of devices. In addition, we discuss about the influence of different annealing techniques and the thermal process times on the dopant distribution of source/drain regions and the gate dielectric.
With device dimension scaling, short channel effect and random dopant fluctuation are serious problems for conventional MOSFETs. A junctionless (JL) transistor is a suitable advanced FinFET candidate owing to simple processing and longer effective gate length. However, variability of JLFET performance due to random dopant fluctuation by ion implantation is projected to be a serious problem as the dopant atoms become increasingly random. It may also degrade the device performance due to quantum confinement and large series resistance. Additionally, to effectively modulate the doped region, the volume of the body must be small enough for a better gate control, bottlenecking the on-current and limiting the feasibility of JLFET. In order to solve the problems, we propose a novel JLFinFET structure with a size-quantum confinement-free fin width and a shell doping profile (SDP) formed by molecular monolayer doping (MLD). Due to the proximity of dopanted region to the gate, the device with a shallower doping depth exhibits better gate control (ION/IOFF > 106). And the reduction of VTH variation and subthreshold swing degradation is also resulted from the suppression of random dopant fluctuation.
Finally, a novel CO2 laser spike annealing (COLSA) with nonmelting and selective-heating feature is used to enhance dopant activation. Formed by MLD method and MWA+COLSA, a poly-Si JLFinTFT with a novel SDP shows excellent performance (ION/IOFF >107) and on-current enhancement (>160%). The mechanism of dopant activation is investigated here, which MWA drives in and partially activates the dopants and COLSA heats the others occupied in the interstitial sites. The method is also applied in bulk FinFET structure, showing the same results with poly-Si JLFinTFTs. Our results reveal the potential for 3D stacked ICs applications.

参考文献 ( 139 ) 〈TOP〉

Chapter 1
连结：
[1.1] Yan Lai, Nicolas Cordero and James C Greer, “Modelling of Sb Activation in Ultrashallow Junction Regions in Bulk and Strained Si,” MRS Proceedings, 1070, 1070-E03-05, 2008.
连结：
[1.2] J. C. Ho, R. Yerushalmi, G. Smith, P. Majhi, J. Bennett, J. Halim, V. N. Faifer, and A. Javey, “Wafer-Scale, Sub-5 nm Junction Formation by Monolayer Doping and Conventional Spike Annealing,” Nano Letters, vol. 9, pp. 725-730, 2009.
连结：
[1.3] D. J. Eaglesham, P. A. Stolk, H.-J. Gossmann, and J. M. Poate, “Implantation and transient B diffusion in Si: The source of the interstitials,” Appl. Phys. Lett. 65, 2305, 1994.
连结：
[1.4] N. E. B. Cowern, G. F. A. van de Walle, P. C. Zalm, and D. W. E. Vandenhoudt, “Mechanisms of implant damage annealing and transient enhanced diffusion in Si,” Appl. Phys. Lett. 65, 2981, 1994.
连结：

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引用含有DOI的文献

DOI可强化引用精确性、增强学术圈连结，并给予使用者跨平台的良好使用经验，目前在全世界已有超过五千万个对象申请DOI。 如想对DOI的使用与概念有进一步了解，请参考 （ ） 。

DOI可强化引用精确性、增强学术圈连结，并给予使用者跨平台的良好使用经验，目前在全世界已有超过五千万个对象申请DOI。如想对DOI的使用与概念有进一步了解，请参考（）。