利用連續流動型反應進行蜂巢狀圖案化氧化鋅側向磊晶成長之研究

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利用连续流动型反应进行蜂巢状图案化氧化锌侧向磊晶成长之研究

Aqueous lateral exitaxial overgrowth of ZnO layers on honeycomb patterned buffer layers through a Continuous Flow Reactor

杨舒涵 , 硕士　　导师：陈厚光　　

繁体中文

氧化锌；图案化制程；水热法；侧向磊晶成长；晶体缺陷； ZnO ； lateral epitaxial overgrowth ； hydrothermal growth ； crystal defects ； patterning process

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摘要 │ 参考文献 (33) │ 国际计量

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In this study, the growth of high quality zinc oxide (ZnO) epitaxial layer is the major objective. To further reduce dislocation density, lateral epitaxial overgrowth (LEO) integrating with patterning processing had been proposed. In previous study, maskless LEO of ZnO on sapphire substrate in low temperature aqueous solution, through the assistance of line-patterned buffer layer, was reported. Although the dislocation density had been reduced, the effect of wing-tilt(a tilt angle of 0.1o) remained in the LEO ZnO layer. To suppress the wing-tilt effect, in our previous work, lateral epitaxial overgrowth of ZnO layer on hexagonal-patterned ZnAl2O4 buffer layers, with continuous flow reactors to conduct long duration epitaxial growth (>24h), can almost prevent the impact of wing-tilt effect.
In this work, another pattern design with hexagonal symmetry, honeycomb pattern, was used to fabricated patterned ZnAl2O4 buffer layers on sapphire substrates. In this study, two different size of honeycomb patterned buffer layer was adopted to perform LEO. Aqueous lateral exitaxial overgrowth of ZnO layer was implemented on honeycomb patterned buffer layer through a conventional autoclave vessel or a continuous flow reactor, respectively. For conventional autoclave vessel, the crystal growth always needs to be interrupted to refresh the growth solution; meanwhile, the formation of the bubble on the center of honeycomb pattern obstruct the growth of ZnO in lateral directions; as a result, the fully coalesced ZnO layer cannot be achieved by the hydrothermal processing with conventional autoclave vessel. In contrast, for aqueous lateral exitaxial overgrowth of ZnO layer through the continuous flow reactor to implement long-duration hydrothermal growth, after LEO growth for 96h, the film was fully coalesced. It is evident that the LEO of ZnO through a continuous flow reactor can prevent the impact of gas bubbles. Based on X-ray diffraction rocking curve measurement, the wing-tilt was almost absent. The average dislocation density in the coalesced LEO layer was about 108 pitting/cm2. The microstructures and optical properties of coalesced ZnO film was implemented by transmission electron microscope and micro photoluminescence measurement.

参考文献 ( 33 ) 〈TOP〉

[1] G. Yuan, Z. Ye, L. Zhu, J. Huang, Q. Qian, and B. Zhao, "Gold schottky contacts on n-type ZnO thin films with an Al/Si(100) substrates," Journal of Crystal Growth, vol. 268, pp.169-173, 2004.
连结：
[2] Y. B. Zhang, S. Li, and G. K. L. Goh, "Lateral epitaxial overgrowth of ZnO films on a seed layer buffered MgAl2O4 substrate in water," in Third International Conference on Smart Materials and Nanotechnology in Engineering. vol. 8409, J. Leng, Y. BarCohen, I. Lee, and J. Lu, Eds., ed, 2012.
连结：
[3] W. C. T. Lee, P. Miller, E. D. Walsby, A. Markwitz, J. Kennedy, R. J. Reeves, et al., "Characterisation of ZnO thin films grown directly on sapphire by PAMBE," presented at the 2004 Conference on Optoelectronic and Microelectronic Materials and Devices, Bribane, QLD; Australia, 2005.
连结：
[4] Y. K. Sun, D. Cherns, R. P. Doherty, J. L. Warren, and P. J. Heard, "Reduction of threading dislocations in ZnO/(0001) sapphire film heterostructure by epitaxial lateral overgrowth of nanorods," Journal of Applied Physics, vol. 104, p.023533, Jul 15 2008.
连结：
[5] H. L. Zhou, H. Pan, T. K. Chan, C. S. Ho, Y. P. Feng, S. J. Chua, et al., "Channeling contrast microscopy of epitaxial lateral overgrowth of ZnO/GaN films," Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, vol. 260, pp 299-303, Jul 2007.
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引用含有DOI的文献

DOI可强化引用精确性、增强学术圈连结，并给予使用者跨平台的良好使用经验，目前在全世界已有超过五千万个对象申请DOI。 如想对DOI的使用与概念有进一步了解，请参考 （ ） 。

DOI可强化引用精确性、增强学术圈连结，并给予使用者跨平台的良好使用经验，目前在全世界已有超过五千万个对象申请DOI。如想对DOI的使用与概念有进一步了解，请参考（）。