Interface Constraints in InP MIS Structures

C. H. Kim；Byungdoo Choe；H. Lim；J. I. Lee；K. N. Kang

Chinese Journal of Physics

30卷5期（1992 / 10 / 01）

785 - 796

英文

This work is a study on the role of the interface defects on the nonuniformity of device characteristics for various InP Metal-Insulator-Semiconductor (MIS) diodes such as plasma oxide/InP, MOCVD-grown Al2O3/InP and PECVD-grown Si3N4/InP. Our investigations are concentrated on the compositional structures at the insulator/semiconductor interface and their effects on the electrical properties of the MIS diodes. The sputtering Auger analysis and the frequency dependent C-V measurements on the plasma oxide/InP diode showed that the interface chemistry is important for the stable electrical characteristics. In Al2O3/p-InP structure, the pinning of the surface Fermi level could be induced by the tunnel trapping of free charges into the insulator due to the existence of a potential barrier for the detrapping of charges as well as the charge trapping centers. In the case of Si3N4/n-InP, any potential barrier for the detrapping of tunnel captured electrons is not observed. It is also found that the trapping mechanism in Si3N4/InP structure is different form that of SiO2nP structure. The effect of sulfuration of InP surface on the stability of interface properties is also discussed.

1. 趙英捷(2017)。共軛添加劑對有機光伏太陽能電池之熱穩定性探討。臺灣大學高分子科學與工程學研究所學位論文。2017。1-140。 
2. 鄭之勛(2017)。以服務行銷觀點探討公立醫院的醫療服務品質管理。國立臺灣大學碩士在職專班國際企業管理組學位論文。2017。1-105。